Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser
2. Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures
3. Quantum-well heterostructure lasers
4. Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures
5. Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz∼200–500 Å)
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006
2. Time‐resolved phonon‐assisted stimulated emission in AlGaAs‐GaAs quantum wells;Applied Physics Letters;1991-07-15
3. Phonon‐assisted stimulated emission in thin (<55 Å) AlGaAs‐GaAs‐AlGaAs single quantum wells;Applied Physics Letters;1988-12-05
4. Molecular beam epitaxy;Reports on Progress in Physics;1985-12-01
5. Free and bound excitons and the effect of alloy disorder in MBE grown AlxGa1-xAs;Journal of Physics C: Solid State Physics;1985-08-20
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