Reversal of sign of the Hall coefficient in n-InSb in the magnetic freeze out regime
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Effect of a magnetic field on donor impurity levels in InSb
2. Quantum Limit Galvanomagnetic Phenomena inn-InSb
3. Magnetic freeze-out effects in n-type indium antimonide
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theory of the anomalous Hall effect in a semiconductor under uniaxial stress;Journal of Physics and Chemistry of Solids;1982-01
2. Bulk and surface conduction by high-purity n-type InSb at low temperature when subjected to intense magnetic fields;Journal of Physics C: Solid State Physics;1980-12-30
3. Impact ionization of excited states of shallow impurities in n-InSb;Physica Status Solidi (a);1980-10-16
4. Investigation of surface-treatment-induced effects on magnetotransport experiments in n-InSb;Journal of Physics C: Solid State Physics;1980-01-30
5. Galvanomagnetic Properties of n-Type InSb at Low Temperatures. III. Transport in the Band Tailing and Hopping between Donors in the Magnetic Freeze-Out Regime;Journal of the Physical Society of Japan;1979-04-15
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