Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures-Reference-Cited by-同舟云学术

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Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures

Published:1988-03 Issue:10 Volume:65 Page:1189-1192
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kreschuk A.M.,Martisov M.Yu.,Polyanskaya T.A.,Savel'ev I.G.,Saidashev I.I.,Shik A.Ya.,Shmartsev Yu.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures

2. Observation of intersubband scattering in a 2-dimensional electron system

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