Quenching phenomenon of photoconductance in indium doped dislocation free GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Compensation mechanisms in GaAs
2. Photoelectric memory effect in GaAs
3. Photoelectronic properties of high‐resistivity GaAs : O
4. Quenching and recovery spectra of midgap levels (EL2) in semi‐insulating GaAs measured by double‐beam photoconductivity
5. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photoquenching of the hopping conduction in arsenic-ion-implanted MBE grown GaAs;Solid State Communications;1997-07
2. A comparison of the thermal and near band‐gap light‐induced recoveries ofEL2 from its metastable state in semiinsulating GaAs;Journal of Applied Physics;1993-05-15
3. Optically induced recovery by near band gap photons (1.4 eV;Journal of Applied Physics;1993-03-15
4. Channeling study of local distortion in indium‐doped semi‐insulating GaAs;Journal of Applied Physics;1990-04-15
5. The EL2 Defect in GaAs: Some Recent Developments;physica status solidi (b);1989-07-01
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