AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure-Reference-Cited by-同舟云学术

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AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure

Published:1996-06 Issue:12 Volume:98 Page:1053-1056
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Chua S.J.,Xu S.J.,Tang X.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Proceedings of the Eleventh International Conference on the Physics of Semiconductors;Tsu,1972

2. Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs

3. Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystals

4. Raman investigation of anharmonicity and disorder-induced effects inGa1−xAlxAsepitaxial layers

5. Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-Directed Growth of AlGaAs Core−Shell Nanowires for Visible Light Applications;Nano Letters;2007-08-16

2. Phonon replicas in ZnO/ZnMgO multiquantum wells;Journal of Applied Physics;2002

3. Three- and low-dimensional inorganic semiconductors;Progress in Solid State Chemistry;1997-01

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