Magnetic field effects on donor transitions in quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
2. Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/Ga1−xAlxAs quantum-well structures
3. Far-infrared absorption profiles for shallow donors in GaAs-AlxGa1−xAs quantum-well structures
4. Donor transition energies and their line strengths in GaAs/AlxGa1−xAs quantum-well structures in the presence of a magnetic field applied parallel to the interfaces
5. Energy levels of a hydrogenic donor in GaAs-GaAlAs quantum well structures in a magnetic field
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1. Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs andGaAs∕Ga1−xAlxAsquantum wells;Physical Review B;2007-01-02
2. Coherent properties and rabi oscillations in two-level donor systems;Brazilian Journal of Physics;2006-06
3. Dressed-band approach to laser-field effects in semiconductors and quantum-confined heterostructures;Physical Review B;2001-06-27
4. Laser dressing effects in low-dimensional semiconductor systems;Solid State Communications;2000-12
5. Excitons and shallow impurities inGaAs−Ga1−xAlxAssemiconductor heterostructures within a fractional-dimensional space approach: Magnetic-field effects;Physical Review B;2000-05-15
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