Behaviour of selenium and tellurium dopants in the solution growth of gallium arsenide-Reference-Cited by-同舟云学术

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Behaviour of selenium and tellurium dopants in the solution growth of gallium arsenide

Published:1971-08 Issue:15 Volume:9 Page:1299-1301
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Greene P.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Behavior of selenium in gallium arsenide

2. Proc. 2nd Int. Symp. on GaAs;Kang,1968

3. Proc. 2nd Int. Symp. on GaAs;Goodwin,1968

4. Proc. 1st Int. Symp. on GaAs;Willardson,1966

5. Messungen an Gallium- und Indium-Verbindungen. X. Über die Chalkogenide von Gallium und Indium

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1. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III–V semiconductors;Journal of Applied Physics;2010-06-15

2. Direct Evidence for As as a Zn-Site Impurity in ZnO;Physical Review Letters;2005-11-15

3. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15

4. Doping of GaAs with Donor Impurities Te and Sn during Liquid Phase Epitaxy from Mixed Gallium  Bismuth Melts;Crystal Research and Technology;1992

5. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals;Journal of Crystal Growth;1986-04

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