Spin dependent trapping at a silicon grain boundary-Reference-Cited by-同舟云学术

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Spin dependent trapping at a silicon grain boundary

Published:1983-08 Issue:6 Volume:47 Page:423-425
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lenahan P.M.,Schubert W.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. The dc voltage dependence of semiconductor grain‐boundary resistance

2. Spin-Dependent Recombination on Silicon Surface

3. Spin-dependent recombination in a silicon p-n junction

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles;Acta Materialia;2019-04

2. Spin-dependent processes in a-Si:H Schottky barrier diodes;Journal of Non-Crystalline Solids;1998-05

3. Spin‐dependent transport at silicon grain boundaries;Journal of Applied Physics;1992-05-15

4. Spin dependent photocurrents in ribbon solar cells;Applied Physics Letters;1992-04-06

5. On the Structure of Dangling Bond Defects in Silicon*;Zeitschrift für Physikalische Chemie;1987-01-01

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