Remote polar phonon scattering in silicon inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Review of experimental aspects of hot electron transport in MOS structures
2. Hot-electron effects in silicon quantized inversion layers
3. Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands
4. Many-body effects inn-type Si inversion layers. I. Effects in the lowest subband
5. The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface
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