Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrate-Reference-Cited by-同舟云学术

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Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrate

Published:1970-03 Issue:6 Volume:8 Page:377-379
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Cho A.Y.,Chen Y.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Proc. Conf. on Structure and Chemistry of Solid Surfaces;Arthur,1969

2. Phase equilibria in the GaAs and the GaP systems

3. ARTHUR J.R. and PANISH M.B., to be published.

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03

2. Semiconductor surface passivation;Materials Science Reports;1988-01

3. Molecular beam epitaxy of InAs/Sr1−xBaxF2/InAs structures;Thin Solid Films;1987-05

4. Molecular‐beam epitaxy and optical characterization of GaAs on CaF2substrates;Journal of Applied Physics;1986-07

5. Five‐layer nonlinear waveguide for second harmonic generation;Applied Physics Letters;1985-09-15

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