Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures
2. Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures
3. Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz∼200–500 Å)
4. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures
5. B.A. Vojak, N. Holonyak, Jr., W.D. Laidig, K. Hess, J.J. Coleman & P.D. Dapkus, J. Appl. Phys.52, to be published.
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1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006
2. Impurity-induced layer disordering of quantum-well heterostructures: discovery and prospects;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures;Applied Physics Letters;1986-03-31
4. Impurity-induced disordering in multilayer structures;Conference on Lasers and Electro-Optics;1986
5. Mechanisms of atomic diffusion in the III-V semiconductors;Journal of Physics D: Applied Physics;1985-04-14
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