Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated silicon-Reference-Cited by-同舟云学术

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Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated silicon

Published:1979-02 Issue:5 Volume:29 Page:415-417
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Roedern B.v.,Ley L.,Cardona M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference6 articles.

1. Electronic properties of substitutionally doped amorphous Si and Ge

2. Amorphous and Liquid Semicond.;Beyer,1977

3. Amorphous and Liquid Semicond.;Beyer,1977

4. Proc. 14th Int. Conf. Physics Semicond;Von Roedern,1978

5. Photoelectron Spectra of Hydrogenated Amorphous Silicon

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1. Electronic structure and optical absorbance of doped amorphous silicon slabs;International Journal of Quantum Chemistry;2011-10-19

2. Electrical conductivity and Meyer–Neldel rule: The role of localized states in hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;2008-05

3. Ab initioestimate of temperature dependence of electrical conductivity in a model amorphous material: Hydrogenated amorphous silicon;Physical Review B;2007-07-16

4. The Surface Chemistry of Hybrid Nanometer-Sized Particles;Journal of Colloid and Interface Science;1997-07

5. Spectroscopic Study of the Effects of Carrier Doping on the Surface Structure of Rh/TiO2 Catalysts and On Their Interaction with CO and H2;The Journal of Physical Chemistry;1994-07

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