Level-anticrossing effect on the magnetoluminescence of the triplet indirect bound exciton in GaSe-Reference-Cited by-同舟云学术

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Level-anticrossing effect on the magnetoluminescence of the triplet indirect bound exciton in GaSe

Published:1979-02 Issue:5 Volume:29 Page:439-442
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Anno H.,Nishina Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Near-edge spontaneous photoluminescence in GaSe1–xSx

2. Proc. Int. Conf. on Solids and Plasmas in High Magnetic Fields;Sasaki,1978

3. The band-gap excitons in gallium selenide

4. Proc. 14th Int. Conf. Phys. Semicond.;Dawson,1978

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interaction of laser light with the AIIIBVIlayered semiconductors: nonlinear optical applications;SPIE Proceedings;2013-03-15

2. Radiative and nonradiative recombination kinetics of indirect bound excitons studied by time-resolved level anticrossing experiments;Journal of Physics: Condensed Matter;2008-01-17

3. Time-resolved spectroscopy of the level-anticrossing effect in exciton emission;Physical Review B;2002-05-10

4. Properties of gallium selenide single crystal;Progress in Crystal Growth and Characterization of Materials;1994-01

5. Relaxed excitons in Cu2O;Solid State Communications;1982-05

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