Band-to-band Auger processes at high carrier concentration
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Concentration Quenching of Luminescence by Donors or Acceptors in Gallium Phosphide and the Impurity-Band Auger Model
2. Luminescence of zinc doped solution grown gallium arsenide
3. Auger recombination in heavily doped p-type GaAs
4. Band Structure and Transport Properties of Some 3–5 Compounds
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1. Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra;Applied Surface Science;2004-05
2. Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InP;Journal of Applied Physics;1985-10
3. Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsP;Journal of Applied Physics;1985-06-15
4. Free carrier lifetime in semi‐insulating GaAs from time‐resolved band‐to‐band photoluminescence;Journal of Applied Physics;1984-05-15
5. Measurements of Alpha-Particle-Induced Charge in GaAs Devices;IEEE Transactions on Nuclear Science;1983
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