Dielectric anomaly in amorphous Si100-xAux system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference8 articles.
1. Metal-Insulator Transition;Mott,1974
2. Dielectric Anomaly and the Metal-Insulator Transition inn-Type Silicon
3. Metal-nonmetal transition in amorphous Si-Au system at low temperatures
4. Non-Crystalline Solids;Hilsch,1960
5. Polarizabilities of shallow donors in silicon
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1. Mechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model;Applied Surface Science;1990-01
2. dc conductivity of arsenic-doped silicon near the metal-insulator transition;Physical Review B;1989-07-15
3. Electrical conductivity mechanisms in Au x Si1−x -amorphous alloys;Philosophical Magazine B;1989-02
4. Alloyed interface formation in the AuSi(111)2 × 1 system studied by photoemission spectroscopy;Surface Science;1988-01
5. The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity;Journal of Physics C: Solid State Physics;1985-08-30
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