A new method for the growth of Pb1−xSnxTe single crystals-Reference-Cited by-同舟云学术

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A new method for the growth of Pb1−xSnxTe single crystals

Published:1974-08 Issue:3 Volume:15 Page:449-452
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Pandey R.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference5 articles.

1. LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS

2. Metallic Inclusions and Cellular Substructure in Pb[sub 1−x]Sn[sub x]Te Single Crystals

3. Ein isothermes schmeltztropfen-verfahren zur herstellung von grossen, sehr reinen und homogenen blei-zinn-tellurd-einkristallen aus der dampfphase

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LEAD COMPOUNDS;Compound Semiconductor Bulk Materials and Characterizations;2012-12

2. Electrical behaviors for growth of LAST alloys using vapor phase deposition;Journal of Alloys and Compounds;2011-03

3. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01

4. Vapour phase growth and properties of Pb1-xSnxTe single crystals;Journal of Crystal Growth;1986-01

5. Vapour phase growth of large crystals of PbTe and Pb1−xSnxTe;Journal of Crystal Growth;1982-11

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