Variation of conduction activation energy and resistivity with thickness in Pb0.5Sn0.5Te thin films-Reference-Cited by-同舟云学术

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Variation of conduction activation energy and resistivity with thickness in Pb0.5Sn0.5Te thin films

Published:1995-03 Issue:11 Volume:93 Page:949-951
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Damodara Das V.,Bahulayan C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Distributed Bragg-reflector Pb<inf>1-x</inf>Sn<inf>x</inf>Te/PbSe<inf>y</inf>Te<inf>1-y</inf>diode lasers

2. High‐speed Pb1−xSnxTe photodiodes

3. V. Damodara Das & C. Bahulayan, J. Appl. Phys. (communicated).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical transport properties of CdS0.9Se0.1:In thin films: effect of film thickness;Materials Chemistry and Physics;2001-04

2. Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films;Solid State Communications;1998-05

3. Size and temperature dependence of electrical resistance and thermoelectric power of Bi2Te2Se1 thin films;Journal of Applied Physics;1998-04

4. Variation of electrical transport properties and thermoelectric figure of merit with thickness in 1% excess Te-doped Pb0.2Sn0.8Te thin films;Semiconductor Science and Technology;1995-12-01

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