Pressure induced semiconductor—metal transition in TmSe0.17Te0.83-Reference-Cited by-同舟云学术

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Pressure induced semiconductor—metal transition in TmSe0.17Te0.83

Published:1981-04 Issue:1 Volume:38 Page:75-77
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Boppart H.,Wachter P.,Batlogg B.,Maines R.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Proc. Int. Conf. on Magnetic Semiconductors;Batlogg,1979

2. Electronic structure of Sm monochalcogenides

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous behavior of phonon diffusiveness coefficient of cubic compounds with anomalous elastic properties;Journal of Low Temperature Physics;1998

2. Chapter 132 Intermediate valence and heavy fermions;Lanthanides/Actinides: Physics - II;1994

3. Excitonic insulator phase inTmSe0.45Te0.55;Physical Review Letters;1991-11-04

4. Rare Earth Elements and Tellurium;Sc, Y, La-Lu Rare Earth Elements;1986

5. The semiconductor-metal transition in Tm-compounds;Journal of Magnetism and Magnetic Materials;1985-02

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