Variable range hopping in Si:P at very low temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference7 articles.
1. Conduction in non-crystalline materials
2. Localized conduction processes in amorphous germanium
3. Electrical conduction in heavily doped germanium
4. Variable range hopping conduction in the lowest temperature region
5. A percolation treatment of dc hopping conduction
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simple activated transport in ion-implanted Si:As at temperatures below 0.5 K;Solid State Communications;1991-04
2. Frequency-dependent conductivity of insulating Si:P and Si:As near the metal-insulator transition;Physical Review B;1988-12-01
3. Microwave conductivity measurements on insulating Si:P near the metal-insulator transition;Solid State Communications;1988-09
4. Critical behavior of Mott variable-range hopping in Si:As near the metal-insulator transition;Physical Review B;1986-03-01
5. Metal-insulator transition in a doped semiconductor;Physical Review B;1983-06-15
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