A study of Al/Si(111)-cleaved interface by photoemission, Auger electron yield, and Auger electron spectroscopies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
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2. Structure of Al/Si(111) interfaces: A photoemission extended x-ray-absorption fine-structure study;Physical Review B;1991-09-15
3. Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperature;Surface Science;1990-10
4. The adsorption and thermal decomposition of trimethylamine alane on aluminum and silicon single crystal surfaces: kinetic and mechanistic studies;Surface Science;1990-10
5. Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv;Vacuum;1990-01
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