Angle resolved photoemission valence band dispersions E(k) for gaP.
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
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5. Experimental energy-band dispersions, critical points, and spin-orbit splittings for GaSb using angle-resolved photoemission
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1. Electronic Structure of Semiconductor Surfaces;Electronic Structure;2000
2. Electronic structure of cubic gallium nitride films grown on GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05
3. X-Ray Emission Spectra and Electronic Structures of Red Phosphorus, 3dTransition-Metal Phosphides and III–V Compounds;Journal of the Physical Society of Japan;1995-07-15
4. Band Structures of Selected Semiconductors and Their Alloys;Semiconductor Alloys;1995
5. Electronic processes in laser-induced Ga0emission and laser ablation of the GaP(110) and GaAs(110) surfaces;Journal of Physics: Condensed Matter;1994-04-04
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