Optical studies on the band structure of Ga0.08In0.92As0.18P0.82
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm
2. GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
3. Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm
4. Efficient lattice‐matched double‐heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−y
5. High‐quantum‐efficiency photoemission from an InGaAsP photocathode
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical parameters of InP-based waveguides;Solid-State Electronics;1987-01
2. Optical methods for the phase analysis of solid solutions of In1?xGaxP1?zAsz;Journal of Applied Spectroscopy;1984-04
3. Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry;Physical Review B;1982-12-15
4. Near-band-gap absorption of InGaAsP at 1.3 μm wavelength;Physica Status Solidi (a);1981-11-16
5. Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP;Solid State Communications;1980-11
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