Identification of electron and hole picosecond trapping processes in doped a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Semiconductors Processes Probed by Ultrafast Laser Spectroscopy;Vardeny,1984
2. Picosecond Photoinduced Transmission Associated with Deep Traps in Phosphorus-Dopeda-Si: H
3. Picosecond trapping of photocarriers in amorphous silicon
4. Subpicosecond carrier trapping in high-defect-density amorphous Si and GaAs
5. Picosecond to microsecond decay of photoinduced absorption in hydrogenated amorphous silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative Deconvolution of Photomodulated Thermoreflectance Signals from Si and Ge Semiconducting Samples;Japanese Journal of Applied Physics;1996-03-15
2. The mechanism of subnanosecond carrier recombination in a-Si:H;Journal of Non-Crystalline Solids;1991-01
3. Hopping in Band Tails, far from Equilibrium;Modern Problems in Condensed Matter Sciences;1991
4. Picosecond studies of saturation of electron trapping on P4+ states in a-Si:H:P;Journal of Non-Crystalline Solids;1989-12
5. Electric Field Dependence of the Electron Drift Velocity in Hydrogenated Amorphous Silicon;MRS Proceedings;1989
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