Effect of gas exposure on the EPR signal from amorphous silicon films-Reference-Cited by-同舟云学术

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Effect of gas exposure on the EPR signal from amorphous silicon films

Published:1978-07 Issue:2 Volume:27 Page:91-94
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Miller D.J.,Haneman D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. The effect of oxygen on the resistivity of evaporated amorphous germanium thin films

2. Proc. Seventh Int. Vacuum Congress and Third Int. Conf. Solid Surfaces;Miller,1977

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of deposition rate on ESR signals in a-Si;Journal of Non-Crystalline Solids;1987-02

2. ESR and low-temperature transport of the damaged surface layer in doped silicon;Journal of Non-Crystalline Solids;1985-12

3. Strongly phonon-bottlenecked spin-lattice relaxation of dangling bonds in sputtered a-Si evidenced by chemical etching;Solid State Communications;1984-11

4. Chapter 3 Magnetic Resonance Measurements in a-Si:H;Semiconductors and Semimetals;1984

5. Decomposition of SiOx Films Due to Internal Stress;physica status solidi (b);1983-07-01

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