Evidence for delocalization in high purity n-type InP-Reference-Cited by-同舟云学术

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Evidence for delocalization in high purity n-type InP

Published:1994-03 Issue:12 Volume:89 Page:1033-1036
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Benzaquen M.,Walsh D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Localization, Interaction and Transport Phenomena;Thomas,1985

2. Disordered electronic systems

3. Localization and Interaction in Disordered Metals and Doped Semiconductors,1986

4. Anomalous electrical behavior ofn-type InP

5. High-temperature mobility of puren-type InP epitaxial layers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exciton-impurity interactions in high-purity InP;Physical Review B;1999-01-15

2. The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP;Journal of Applied Physics;1997-12

3. Evidence from electrical transport and photoluminescence spectroscopy of a band of localized deep donors in high-purityn-type InP grown by chemical-beam epitaxy;Physical Review B;1994-12-15

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