Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. Decay times of one-dimensional excitons in GaAs/AlxGa1−xAs quantum-well wires
2. Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effect
3. Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy
4. Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
5. Lateral interface mixing in GaAs quantum well wire arrays
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1. Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets;JETP Letters;2012-03
2. A Raman-scattering study on the interface structure of nanolayered TiAlN∕TiN and TiN∕NbN multilayer thin films grown by reactive dc magnetron sputtering;Journal of Applied Physics;2005-07
3. Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (311)A surface;Physica E: Low-dimensional Systems and Nanostructures;2004-07
4. Self-Organization Phenomena at Crystal Surfaces;NanoScience and Technology;2004
5. Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces;Microelectronics Journal;2002-07
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