Linear polarization effects on photoluminescence properties of GaAs/AlAs quantum well heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1−xAsmultilayer structures
2. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
3. Theory of valence subbands in GaAs heterostructures
4. Interband optical transitions in GaAs-Ga1−xAlxAs and InAs-GaSb superlattices
5. Highly anisotropic optical properties of single quantum well waveguides
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1. Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices;Japanese Journal of Applied Physics;2008-01-18
2. Optical polarization anisotropy of quantum wells induced by a cubic anisotropy of the host material;Physica E: Low-dimensional Systems and Nanostructures;2002-02
3. Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice;Applied Physics Letters;2001-06-25
4. Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy;Semiconductors;1998-10
5. A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface;Semiconductors;1997-07
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