The measurement of the temperature inside the hot phonon spot induced by laser excitation of silicon-Reference-Cited by-同舟云学术

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The measurement of the temperature inside the hot phonon spot induced by laser excitation of silicon

Published:1994-10 Issue:3 Volume:92 Page:203-206
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Bonch-Osmolovskii M.M.,Galkina T.I.,Klokov A.Yu.,Plotnikov A.F.,Pokrovskii Yu.Yu.,Sharkov A.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Interaction of Electron-Hole Drops with Ballistic Phonons in Heat Pulses: The Phonon Wind

2. Phonon hot spot formation in GaAs under optical excitation

3. Measurement of a phonon hot spot in photoexcited Si

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1. Evolution of phonon nonequilibrium in single-crystal ZnSe at liquid-helium temperatures;Physics of the Solid State;2006-09

2. Propagation of nonequilibrium phonons in single-crystal ZnTe;Semiconductors;2003-05

3. Response of a YBaCuO/MgO bolometer structure at high levels of laser excitation. Nonlinear model and experiment;Physics of the Solid State;1998-02

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