Recombination centers in phosphorous doped hydrogenated amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference31 articles.
1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
2. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
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