The characterization of sulfur incorporation in GaAs(1-x)Sx compound by infra-red spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Les matériaux pour photopiles solaires
2. New and unified model for Schottky barrier and III–V insulator interface states formation
3. Surface fermi level of III–V compound semiconductor-dielectric interfaces
4. A general model for interface-trap charge-pumping effects in MOS devices
5. Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAs
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1. Insulating layers of polycrystalline GaAsS compounds grown by reactive plasma sputtering;Thin Solid Films;1999-01
2. Electrical and photoelectrical characterization of GaAsxSy polycrystalline thin films;Thin Solid Films;1997-03
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