Electronic transitions on UHV-cleaved Si (111) adsorbed with oxygen
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference6 articles.
1. Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfaces
2. Oxidation of Clean Ge and Si Surfaces
3. Surface-State Transitions of Silicon in Electron Energy-Loss Spectra
4. NISHIJIMA M. & FUJIWARA K. (unpublished).
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1. Bonding state of silicon segregated toα-iron surfaces and on iron silicide surfaces studied by electron spectroscopy;Physical Review B;1984-02-15
2. Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983
3. SiO2 ultra thin film growth kinetics as investigated by surface techniques;Surface Science;1982-06
4. Interactions of NO with a Ni(100) surface;Surface Science;1980-03
5. Electron energy-loss spectra of co-adsorbed Ni(100) surfaces;Surface Science;1979-01
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