Excess elastic energy and the instability of (GaAs)1(InAs)1(0 0 1), Ga3InAs4, GaIn3As4 and Ga1−xInxAs alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Self-consistent energy bands and formation energy of the (GaAs)1(AlAs)1(001) superlattice
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4. Atomic structure and ordering in semiconductor alloys
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2. As-Ga-In (Arsenic-Gallium-Indium);Non-Ferrous Metal Systems. Part 1;2006
3. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
4. GaAs:N vs GaAs:B alloys: Symmetry-induced effects;Physical Review B;2001-09-28
5. Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems;Physical Review B;2000-04-15
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