Photoluminescence of Mn- and Un-doped Ga0.47In0.53As on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. An In0.53Ga0.47As junction field-effect transistor
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3. E. Kuphal & D. Fritzsche, to appear in Vol. 12 of J. of Elect. Materials.
4. Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate
5. Mn as a p-type dopant in In0.53Ga0.47As on InP substrates
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