The formation of arsenic antisite defects during plastic deformation of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Identification of AsGaantisites in plastically deformed GaAs
2. Semi-Insulating III–V Materials;Weber,1984
3. Antisite-related defects in plastically deformed GaAs
4. Semi-Insulating III–V Materials;Samuelson,1984
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1. Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?;Philosophical Magazine;2006-10-11
2. Comparison of neutron and electron irradiation on the EL2 defect in GaAs;Journal of Applied Physics;1995-04
3. Photoenhancement and photoquenching of the 0.68-eVEL2 photoluminescence emission in GaAs grown by molecular-beam epitaxy at low temperatures;Physical Review B;1994-06-15
4. Photobehavior of paramagnetic anion antisites in plastically deformed GaAs;Journal of Applied Physics;1992-08-15
5. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect;Physical Review B;1990-05-15
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