Theory of defect complexes at semiconductor surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
2. Chemisorption-Induced Defects on GaAs(110) Surfaces
3. Fermi level and surface barrier of GaxIn1−xAs alloys
4. Surface defects on semiconductors
5. Correlation of GaAs surface chemistry and interface Fermi‐level position: A single defect model interpretation
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1. Effect of prepared GaAs surface on the sulfidation with (NH4)2Sx solution;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-01
2. Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx;Thin Solid Films;1996-12
3. Thermal effects on GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05
4. Effect of laser irradiation on the superconductive properties of (Y0.95Sm0.05) Ba2Cu3Ox;Physica Status Solidi (a);1989-12-16
5. Radiation effect of Bi0.7Pb0.3SrCaCu1.8Ox irradiated by a high-powered short-pulsed laser;Journal of the Less Common Metals;1989-11
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