Influence of oxygen contamination on annealing behaviours of spin density and optical gap of amorphous silicon films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Structural, Optical, and Electrical Properties of Amorphous Silicon Films
2. Connection between ESR and electrical conduction in amorphous Si films
3. Effects of annealing on gap states in amorphous Si films
4. Generation of dangling bonds by high temperature annealing and hopping conduction in amorphous silicon films
5. Optical constants of rf sputtered hydrogenated amorphous Si
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The role of surface in sputtered amorphous silicon: An oxidation study;Journal of Applied Physics;1985-12
2. The Spin Density and Optical Properties of Amorphous Thin Arsenic Silicate Films;physica status solidi (b);1984-11-01
3. Amorphous silicon bibliography 1982 update introduction;Solar Cells;1984-01
4. Chapter 2 The Optical Absorption Edge of a-Si: H;Semiconductors and Semimetals;1984
5. Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambient;Solid State Communications;1983-10
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