Evidence for divacancy reaction in GaAs during Cu diffusion-Reference-Cited by-同舟云学术

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Evidence for divacancy reaction in GaAs during Cu diffusion

Published:1964-03 Issue:3 Volume:2 Page:87-90
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Fuller C.S.,Wolfstirn K.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Halbleiter Probleme IV;Haasen,1958

2. Diffusion, Solubility, and Electrical Properties of Copper in Indium Antimonide

3. Diffusion, solubility, and electrical behavior of copper in gallium arsenide

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity Effects of Metal Ions in Chalcogenide Glass Films;MRS Proceedings;1985

2. Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors;Japanese Journal of Applied Physics;1984-08-20

3. Hall‐Effect Levels Produced in Te‐Doped GaAs Crystals by Cu Diffusion;Journal of Applied Physics;1967-06

4. Photoluminescence of Cu‐Doped Gallium Arsenide;Journal of Applied Physics;1966-12

5. Cu-doubling effect in gallium arsenide;Journal of Physics and Chemistry of Solids;1966-11

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