X-ray emission study of amorphous SiOx:H films (0 ⩽ x ⩽ 2.2)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Photoemission study ofSiOx(0≤x≤2) alloys
2. G. Wiech, W. Zahorowski, D. Baumüller, A. Šimůunek & H. Watanabe, Physica Scripta.
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1. An AES study of intrinsic and ion-induced structure in the SiO2-Si system;Applied Surface Science;1994-09
2. Electronic structure of amorphousSiOx:H alloy films studied by x-ray emission spectroscopy: SiK, SiL, and OKemission bands;Physical Review B;1993-03-15
3. Interface properties of hydrogenated amorphous carbon films on SiO2 and SiO1.2: an in situ photoelectron study;Surface Science;1992-12
4. Interpretation of the x-ray emission spectra of a-SiOx;Solid State Communications;1992-07
5. Application of a position-sensitive detector to soft X-ray emission spectroscopy;Measurement Science and Technology;1991-07-01
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