Electroreflectance spectra of InGaAs/AlGaAs strained quantum-well structures-Reference-Cited by-同舟云学术

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Electroreflectance spectra of InGaAs/AlGaAs strained quantum-well structures

Published:1990-07 Issue:4 Volume:75 Page:289-292
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Fritz I.J.,Brennan T.M.,Ginley D.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures

2. Spectroscopic Characterization Techniques for Semiconductor Technology III;Pollak,1988

3. Spectroscopic Characterization Techniques for Semiconductor Technology III;Shen,1988

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03

2. Electroreflection from higher subband transitions in a ZnSe–Zn0.8Cd0.2Se superlattice;Solid State Communications;1999-07

3. Semiconductor characterization by a new contactless electroreflectance technique employing surface acoustic waves;Semiconductor Science and Technology;1997-01-01

4. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices;Materials Science and Engineering: R: Reports;1993-10

5. Observation of Wannier-Stark localization by electroreflectance spectroscopy;Physical Review B;1993-09-15

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