Luminescence in high purity In0.53Ga0.47As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. GaInAsP Alloy Semiconductors,1982
2. Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique
3. Proc. Intl. Symp. GaAs and Related Compounds;Pearsall,1981
4. GaInAs‐AlInAs structures grown by molecular beam epitaxy
5. Optical quality GaInAs grown by molecular beam epitaxy
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1. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors;Semiconductor Science and Technology;2002-05-09
2. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04
3. Empirical pseudopotential band structure of In0.53Ga0.47As and In0.52Al0.48As;Solid-State Electronics;1999-02
4. Radiative recombination of epitaxial In1−x Ga x As layers grown on indium phosphide substrates;Journal of Applied Spectroscopy;1994-05
5. Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor‐phase epitaxy InGaAs/InP;Journal of Applied Physics;1993-05
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