Author:
Sharma Pratibha,Vashistha Manvendra,Jain I.P.
Subject
Instrumentation,Radiation
Reference8 articles.
1. Defect production and annealing due to high-energy ion implantation: silicon;Belykh;Nucl. Instrum. Methods B,1980
2. Brodsky, M.H., 1979. In: Amorphous Semiconductors. Springer, New York.
3. Kanjilal, D., Chopra, S., Narayanan, M.M., Iyer, I.S., Jha, Vandana, Joshi, R., Datta, S.K., 1993. Testing and operation of the 15 UD Pelletron at NSC. Nucl. Instrum. Methods A 328, 97–100.
4. Ovshinsky, S.R., 1978. In: Spear, WE. (Ed.), Proceedings of the 7th International Conference on Amorphous and Liquid Semiconductors, Edinburg, Institute of Physics, Bristol, p. 519.
5. What do electrical conductivity and electrical modulus spectra tell us about the mechanisms of ion transport processes in melts, glasses and crystals?;Roling;J. Non Cryst. Solids,1999
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