InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region-Reference-Cited by-同舟云学术

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InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

Published:2001-06 Issue:3-5 Volume:42 Page:479-484
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Chen Z.H,Baklenov O,Kim E.T,Mukhametzhanov I,Tie J,Madhukar A,Ye Z,Campbell J.C

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases

2. Intrinsic mechanism for the poor luminescence properties of quantum-box systems

3. The theory of quantum-dot infrared phototransistors

4. D.M.-T. Kuo, A. Fang, Y.C. Chang, Infrared Phys. Technol. 42 (2001) 433

5. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

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1. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD;Applied Surface Science;2022-01

2. The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures;Journal of Luminescence;2017-12

3. Progress in Infrared Photodetectors Since 2000;Sensors;2013-04-16

4. Nonlinear Optical Rectification and Oscillator Strength in a Spherical Quantum Dot with Parabolic Confinement in the Presence of the Electric Field;Journal of Nanoelectronics and Optoelectronics;2013-02-01

5. Optical absorption and refraction index change of a confined exciton in a spherical quantum dot nanostructure;The European Physical Journal B;2011-11-23

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