A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors-Reference-Cited by-同舟云学术

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A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors

Published:1997-04 Issue:3 Volume:38 Page:133-138
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Shen W.Z.,Perera A.G.U.,Gamage S.K.,Yuan H.X.,Liu H.C.,Buchanan M.,Schaff W.J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. F.D. Shepherd, V.E. Vickers and A.C. Yang, U.S. Patent No. 3,603,847 (Sept. 1971).

2. Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors

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2. Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications;Journal of Applied Physics;2005-07-15

3. Design and optimization of GaAs∕AlGaAs heterojunction infrared detectors;Journal of Applied Physics;2004-10-15

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5. QUANTUM STRUCTURES FOR FAR-INFRARED DETECTION;International Journal of High Speed Electronics and Systems;2002-09

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