Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

Author:

Ahmed SalahaldeinORCID,Lai Pengyu,Chinnaiyan SudharsanORCID,Mantooth AlanORCID,Chen ZhongORCID

Funder

Center for Power Optimization of Electro-Thermal Systems

National Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology

Reference34 articles.

1. Thermal stability of SiC-MOSFETs at high temperatures;Unger;IEEE Trans. Electron Dev.,2019

2. A high temperature silicon carbide mosfet power module with integrated silicon-on-insulator-based gate drive;Wang;IEEE Trans. Power Electron.,2015

3. Survey of high-temperature reliability of power electronics packaging components;Khazaka;IEEE Trans. Power Electron.,2015

4. High-temperature silicon carbide and silicon on insulator based integrated power modules;Lostetter,2009

5. Transitioning to physics-of-failure as a reliability driver in power electronics;Wang,2014

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