Simulation of ultrasound influence on melt convection for the growth of GaxIn1−xSb and Si single crystals by the Czochralski method-Reference-Cited by-同舟云学术

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Simulation of ultrasound influence on melt convection for the growth of GaxIn1−xSb and Si single crystals by the Czochralski method

Published:2014-12 Issue:8 Volume:54 Page:2165-2168
ISSN:0041-624X
Container-title:Ultrasonics
language:en
Short-container-title:Ultrasonics

Author:

Kozhemyakin G.N.,Nemets L.V.,Bulankina A.A.

Publisher

Elsevier BV

Subject

Acoustics and Ultrasonics

Reference33 articles.

1. Convection and inhomogeneities in crystal growth from the melt;Müller,1988

2. Floating zone growth of silicon under microgravity in a sounding rocket;Eyer;J. Cryst. Growth,1985

3. The influence of g-Jitter on liquid diffusion the QUELD/MIM/MIR programme;Smith;Microgravity Sci. Technol.,1998

4. A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors;Hurle;J. Cryst. Growth,2004

5. Plawlenie, kristallizatsiya I fazoobrazovanie v navasomosti;Ivanov,1979

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4. Opportunities of striation-free crystal growth with ultrasound effect;CrystEngComm;2022

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