Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference9 articles.
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2. S.U. Schwarz, et al., DNA-sensor based on AlGaN/GaN high electron mobility transistor,Phys.Status Solidi A208 (2011), 1626-1629.
3. A. Poghossian, et al., Possibilities and limitations of label-free detection of DNA hybridization with field-effect-based devices, Sens. Actuators. B 111-112 (2005), 470-480.
4. S. Ingebrandt, et. al, Label-free detection of single nucleotide polymorphisms utilizing the differential transfer function of field-effect transistors. Biosens.Bioelectron. 22 (2007). 2834-2840.
5. M. W. Shinwari, et. al, Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design,Microelectron. Reliab. 47(12) (2007), 2025-2057.
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