Impact of Snapback Stress on the Degradation of ultra-short and Ultra-thin LDD NMOSFET
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference7 articles.
1. The effect of hot carrier stressing on gate oxide integrity in MOSFET‘s;Chen;IEEE Trans. Electron Devices,1988
2. Gate oxide breakdown accelerated by large drain current in n-channel MOSFETs;Nishioka;IEEE Electron Device Lett.,1991
3. Impact of Snapback-Induced Hole Injection on Gate Oxide Reliability of NMOSFETs;Mistry;IEEE electron device letters,1990
4. Wu J, Juliano P and Rosenbaum E, Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions, Proceedings of the EOS/ESD Symposium, 2000, pp. 287-295.
5. Electrostatic Discharge Effects in Ultra-Thin Gate Oxide MOSFETs;Andrea;IEEE Transactions on Device and Materials Reliability,2006
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