Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator-Reference-Cited by-同舟云学术

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Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

Published:1998-01 Issue:1 Volume:92 Page:47-52
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Dimitrakopoulos Christos D.,Furman Bruce K.,Graham Teresita,Hegde Suryanarayan,Purushothaman Sampath

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film

2. Field‐effect mobility of poly(3‐hexylthiophene)

3. New semiconductor device physics in polymer diodes and transistors

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