Anisotropy in diffusion-noise temperature and differential mobility induced in semiconductors by an external electric field
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
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1. Anisotropic high‐field transverse differential mobility of holes in silicon;Applied Physics Letters;1995-11-13
2. Small-signal analysis of the Boltzmann equation from harmonic- and impulse-response methods;Physical Review B;1994-04-15
3. Relaxation of Momentum and Energy of Carriers in Semiconductors;Semiconductors Probed by Ultrafast Laser Spectroscopy;1984
4. Long-Time Tail of the Autocorrelation Function for Electron Drift in High Electric Fields in Silicon;Physical Review Letters;1980-09-01
5. Noise and Diffusion of Hot Carriers;Physics of Nonlinear Transport in Semiconductors;1980
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