Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device-Reference-Cited by-同舟云学术

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Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device

Published:2020-12 Issue:18 Volume:46 Page:29041-29051
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Thien Gregory Soon How,Talik Noor Azrina,Yap Boon Kar,Nakajima Hideki,Tunmee Sarayut,Chanlek Narong,Goh Boon Tong

Funder

Newton Fund

Universiti Malaya

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. A review: thermal stability of methylammonium lead halide based perovskite solar cells;Ava;Appl. Sci.,2019

2. Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite;Dittrich;Appl. Phys. Lett.,2016

3. First-principles calculations of the electronic and optical properties of CH3NH3PbI3 for photovoltaic applications;Ali;Mater. Today Proc.,2018

4. Dielectric and ferroic properties of metal halide perovskites;Wilson;Apl. Mater.,2019

5. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition;Fan;Sci. Rep.,2016

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix;Materials Science in Semiconductor Processing;2024-08

2. High-throughput screening of the transport behavior of tetragonal perovskites;Physical Chemistry Chemical Physics;2024

3. The Role of Polymers in Halide Perovskite Resistive Switching Devices;Polymers;2023-02-21

4. Electrical transport properties of TiO₂/MAPbI₃ and SnO₂/MAPbI₃ heterojunction interfaces under high pressure;RSC Advances;2023

5. Improved Performance of the Al₂O₃-Protected HfO₂–TiO₂ Base Layer with a Self-Assembled CH₃NH₃PbI₃ Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory;ACS Applied Materials & Interfaces;2022-11-03

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